BUD42D-1 datasheet(2/14 Pages) ONSEMI

Part #	BUD42D-1

Description	High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

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BUD42D

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus)

350

430

−

Vdc

Collector−Base Breakdown Voltage

(ICBO = 1 mA)

VCBO

650

780

−

Vdc

Emitter−Base Breakdown Voltage

(IEBO = 1 mA)

VEBO

9.0

12

−

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

@ TC = 25°C

@ TC = 125°C

ICEO

−

100

200

µAdc

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

@ TC = 25°C

@ TC = 125°C

ICES

−

10

200

µAdc

Emitter−Cutoff Current

(VEB = 9 Vdc, IC = 0)

IEBO

−

100

µAdc

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

VBE(sat)

−

0.85

1.2

Vdc

Collector−Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.5 Adc)

VCE(sat)

−

0.2

1.0

Vdc

DC Current Gain

(IC = 1 Adc, VCE = 2 Vdc)

(IC = 2 Adc, VCE = 5 Vdc)

hFE

8.0

10

13

12

−

DIODE CHARACTERISTICS

Forward Diode Voltage

(IEC = 1.0 Adc)

VEC

−

0.9

1.5

V

SWITCHING CHARACTERISTICS: Resistive Load (D.C.

≤ 10%, Pulse Width = 40 µs)

Turn−Off Time

(IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V)

Toff

4.6

−

6.55

µs

Fall Time

(IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = −2 V)

Tf

−

0.8

µs

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

IC = 400 mA

IB1 =40mA

@ 1

µs

@ TC = 25°C

@ TC = 125°C

VCE(dsat)

−

2.8

3.2

−

V

Dynamic Saturation

Voltage:

Determined 1

µs and

IB1 = 40 mA

VCC = 300 V

@ 3

µs

@ TC = 25°C

@ TC = 125°C

−

0.75

1.3

−

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 1 A

IB1 = 200 mA

@ 1

µs

@ TC = 25°C

@ TC = 125°C

−

2.1

4.7

−

90% of final IB1

IB1 = 200 mA

VCC = 300 V

@ 3

µs

@ TC = 25°C

@ TC = 125°C

−

0.35

0.6

−

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