BUD42DT4 datasheet(4/14 Pages) ONSEMI

Part #	BUD42DT4

Description	High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

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Manufacturer	ONSEMI [ON Semiconductor]

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BUD42D

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4

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base−Emitter Saturation Region

10

1

0.1

10

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base−Emitter Saturation Region

10

1

0.1

10

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

1

TJ = 125°C

TJ = 25°C

TJ = −20°C

1

IC/IB = 5

Figure 9. Base−Emitter Saturation Region

10

1

0.1

10

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

10

1

0.1

10

0.1

0.01

REVERSE EMITTER−COLLECTOR CURRENT

1

IC/IB = 10

TJ = 25°C

TJ = 125°C

TJ = −20°C

TJ = 125°C

TJ = 25°C

TJ = −20°C

IC/IB = 8

1

VEC(V) = −20°C

VEC(V) = 125°C

VEC(V) = 25°C

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