BUD42D datasheet(3/14 Pages) ONSEMI | High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

Part Name

Description

BUD42D

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability ( 14 Page)

ONSEMI

3 page

BUD42D

http://onsemi.com

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ VCE = 1 V

100

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

Figure 2. DC Current Gain @ VCE = 5 V

100

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region

0.1

0.01

0.001

IB, BASE CURRENT (AMPS)

IC = 0.2 A

Figure 4. Collector−Emitter Saturation Voltage

0.01

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

IC/IB = 5

TJ = 25°C

1 A

1.5 A

2 A

Figure 5. Collector−Emitter Saturation Voltage

100

0.01

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector−Emitter Saturation Voltage

0.01

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

IC/IB = 8

TJ = 125°C

TJ = 25°C

TJ = −20°C

IC/IB = 10

0.4 A

TJ = 125°C

TJ = 25°C

TJ = −20°C

0.1

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