SQM200N04-1m8 datasheet(1/10 Pages) VISHAY

Part #	SQM200N04-1m8

Description	Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQM40010EL

www.vishay.com

Vishay Siliconix

S15-2917-Rev. A, 14-Dec-15

1

Document Number: 69430

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET® power MOSFET

• Package with low thermal resistance

• 100 % Rg and UIS tested

• AEC-Q101 qualified d

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

40

RDS(on) () at VGS = 10 V

0.0016

RDS(on) () at VGS = 4.5 V

0.0019

ID (A)

120

Configuration

Single

D

G

S

N-Channel MOSFET

TO-263

Top View

G

D

S

G

D

S

ORDERING INFORMATION

Package

TO-263

Lead (Pb)-free and Halogen-free

SQM40010EL-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current a

TC = 25 °C

ID

120

A

TC = 125 °C

120

Continuous Source Current (Diode Conduction) a

IS

120

Pulsed Drain Current b

IDM

300

Single Pulse Avalanche Current

L = 0.1 mH

IAS

80

Single Pulse Avalanche Energy

EAS

320

mJ

Maximum Power Dissipation b

TC = 25 °C

PD

375

W

TC = 125 °C

125

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mount c

RthJA

40

°C/W

Junction-to-Case (Drain)

RthJC

0.4

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