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AND8079 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. AND8079
Description  A Low Cost DDR Memory Power Supply Using the NCP1571 Synchronous Buck Converter and a LM358 Based Linear Voltage Regulator
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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 3 page
background image
Q1
MTB1306
D2 PAK
TP5
TP6
TP7
TP8
TP9
TP10
5 V_Input
GND_Input
12 V_Input
V_Logic
V_5P0_STBV
-12 V_Input
R1
10
C12
0.1
mF
VTT (+1.25V, 2A)
VREF (+1.25V, 2mA)
VDDQ (+2.5V, 8A)
Q2
MTB1306
D2 PAK
NCP1571
SO-8
L1
1
mH
Q5
MTD20P03HDL
DPAK
C16
C17
VCC
GATE(H)
8
7
6
5
1
2
3
4
C1
1800
mF
10V
C2
1800
mF
10V
C4
0.1
mF
C5
1800
mF
10V
Prov.
C7
1800
mF
6.3V
Prov.
C8
1800
mF
6.3V
C9
0.1
mF
C11
1800
mF
6.3V
D1
MBRM110LT
PowerMite Prov.
C15
1
mF
OUT
OUT
Q4
NTD4302
D2 PAK
TP1
TP2
TP3
TP4
Tol. = 1.0%
Tol. = 1.0%
U2A
LM358
Micro8
ON OFF
VOUT
C24
1
mF
C20
1800
mF
6.3V
Prov.
R7
1k
R5
10K
C21
1800
mF
6.3V
Prov.
R6
10K
C22
0.1
mF
C23
1800
mF
6.3V
C18
0.15
mF
R9
100
R8
200
C19
1.25V_Ref
GND_Output
1.25V_Vtt
6
5
7
R3
20k
R4
13k
L2
2.2
mH
Tol = 1.0%
To = 1.0%
Q3
MTB1306
D2PAK
C6
100pF
2.5V
0.1
mF
0.1
mF
2
3
4
V-
V+
8
R2
47k
C13
0.01
mF
C14
0.1
mF
MC33375ST-2.5T3
SOT-223
1
2
3
4
U2B
LM358
C3
1800
mF
10V
GATE(L)
Vfb
GND
PWRGD
PGDELAY
COMP
C10
1800
mF
6.3V
GND
VIN
Figure 2. DDR Memory Reference Design
2
mF
Note: The provisional components were not used in the verification of the reference design.
U1
U3 Prov.
1




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