SQD40N10-25 datasheet(1/10 Pages) VISHAY

Part #	SQD40N10-25

Description	Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQD70140EL

www.vishay.com

Vishay Siliconix

S16-0555-Rev. A, 28-Mar-16

1

Document Number: 78633

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET® power MOSFET

• Package with low thermal resistance

• 100 % Rg and UIS tested

• AEC-Q101 qualified

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR4 material).

PRODUCT SUMMARY

VDS (V)

100

RDS(on) () at VGS = 10 V

0.0150

RDS(on) () at VGS = 4.5 V

0.0190

ID (A)

30

Configuration

Single

Package

TO-252

Top View

TO

G

D

S

Drain connected to tab

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C a

ID

30

A

TC = 125 °C

27

Continuous Source Current (Diode Conduction) a

IS

30

Pulsed Drain Current b

IDM

120

Single Pulse Avalanche Current

L = 0.1 mH

IAS

34

Single Pulse Avalanche Energy

EAS

58

mJ

Maximum Power Dissipation b

TC = 25 °C

PD

71

W

TC = 125 °C

23

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mount c

RthJA

50

°C/W

Junction-to-Case (Drain)

RthJC

2.1

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