SQD50N06-09L datasheet(4/11 Pages) VISHAY

Part #	SQD50N06-09L

Description	Automotive N-Channel 150 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQD25N15-52

www.vishay.com

Vishay Siliconix

S15-2583-Rev. G, 02-Nov-15

4

Document Number: 68604

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

Q

g - Total Gate Charge (nC)

I

D = 25 A

V

DS = 75 V

0.001

0.01

0.1

1

10

100

0.00.2

0.40.6

0.81.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-2.0

-1.4

-0.8

-0.2

0.4

1.0

-50

-25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 5 A

V

GS = 10 V

0.00

0.05

0.10

0.15

0.20

0.25

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

140

150

160

170

180

190

-50

-25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 10 mA

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SQD50N06-09L Datasheet(PDF) 4 Page - Vishay Siliconix

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