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SQD50N04-5m6 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQD50N04-5m6 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQD19P06-60L www.vishay.com Vishay Siliconix S11-2065-Rev. C, 24-Oct-11 1 Document Number: 65158 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • Package with Low Thermal Resistance •100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) - 60 RDS(on) () at VGS = - 10 V 0.055 RDS(on) () at VGS = - 4.5 V 0.100 ID (A) - 20 Configuration Single S G D P-Channel MOSFET TO-252 S GD Top View Drain Connected to Tab ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD19P06-60L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID - 20 A TC = 125 °C - 11 Continuous Source Current (Diode Conduction)a IS - 25 Pulsed Drain Currentb IDM - 80 Single Pulse Avalanche Current L = 0.1 mH IAS - 24 Single Pulse Avalanche Energy EAS 28 mJ Maximum Power Dissipationb TC = 25 °C PD 46 W TC = 125 °C 15 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 50 °C/W Junction-to-Case (Drain) RthJC 3.2 |
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