SQD40N06-14L datasheet(1/10 Pages) VISHAY

Part #	SQD40N06-14L

Description	Automotive P-Channel 100 V (D-S) 175 °C MOSFET

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SQD40P10-40L

www.vishay.com

Vishay Siliconix

S11-1559-Rev. B 22-Aug-11

1

Document Number: 67022

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

- 100

RDS(on) () at VGS = - 10 V

0.040

RDS(on) () at VGS = - 4.5 V

0.048

ID (A)

- 38

Configuration

Single

S

G

D

P-Channel MOSFET

TO-252

S

GD

Top View

Drain Connected to Tab

ORDERING INFORMATION

Package

TO-252

Lead (Pb)-free and Halogen-free

SQD40P10-40L-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

- 38

A

TC = 125 °C

- 22

Continuous Source Current (Diode Conduction)a

IS

- 50

Pulsed Drain Currentb

IDM

- 150

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 44

Single Pulse Avalanche Energy

EAS

96

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

136

W

TC = 125 °C

45

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

50

°C/W

Junction-to-Case (Drain)

RthJC

1.1

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SQD40N06-14L Datasheet(PDF) 1 Page - Vishay Siliconix

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