SQ4435EY datasheet(4/10 Pages) VISHAY

Part #	SQ4435EY

Description	Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ4431EY

www.vishay.com

Vishay Siliconix

S13-1183-Rev. C, 20-May-13

4

Document Number: 65527

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

Source Drain Diode Forward Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

- 40

- 38

- 36

- 34

- 32

- 30

- 50

- 25

0

25

50

75

100

125

150

175

ID =1mA

TJ - Junction Temperature (°C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

175

ID =7 A

VGS =4.5 V

VGS =10V

TJ - Junction Temperature (°C)

0.00

0.05

0.10

0.15

0.20

0.25

0

2468

10

TJ = 25 °C

TJ = 150 °C

VGS - Gate-to-Source Voltage (V)

- 0.4

- 0.1

0.2

0.5

0.8

1.1

- 50

- 25

0

25

50

75

100

125

150

175

ID = 250 μA

ID =1mA

TJ - Temperature (°C)

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