SQ2362ES datasheet(4/10 Pages) VISHAY

Part #	SQ2362ES

Description	Automotive P-Channel 80 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ2337ES

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Vishay Siliconix

S13-1184-Rev. B, 20-May-13

4

Document Number: 66717

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Safe Operating Area

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1.2 A

V

GS = 6 V

V

GS = 10 V

0.001

0.01

0.1

1

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

- 0.5

- 0.2

0.1

0.4

0.7

1.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.0

1.0

2.0

3.0

4.0

5.0

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 110

- 105

- 100

- 95

- 90

- 85

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

0.01

1

10

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

TA = 25 °C

Single Pulse

BVDSS Limited

10 s, DC

Limited by R

*

DS(on)

IDM Limited

100 ms

10 ms

1 ms

1 s

0.1

100 µs

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