SISA34DN datasheet(1/13 Pages) VISHAY

Part #	SISA34DN

Description	N-Channel 30 V (D-S) MOSFET

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 13 page

SiSA34DN

www.vishay.com

Vishay Siliconix

S14-1338-Rev. A, 30-Jun-14

1

Document Number: 64899

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

Ordering Information:

SiSA34DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® Gen IV power MOSFET

• 100 % Rg and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• DC/DC power supplies

• High current power rails in computing

• Telecom POL and bricks

• Battery protection

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

f. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω) (MAX.)

ID (A) f

Qg (TYP.)

30

0.0067 at VGS = 10 V

40

8 nC

0.0098 at VGS = 4.5 V

34.3

PowerPAK® 1212-8 Single

Top View

1

3.3

mm

3.3

mm

Bottom View

1

S

1

S

2

S

3

S

4

G

D

8

D

7

D

6

D

5

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+20, -16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

40

A

TC = 70 °C

33.2

TA = 25 °C

16.2 a, b

TA = 70 °C

15.8 a, b

Pulsed Drain Current (t = 100 μs)

IDM

100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

18.9

TA = 25 °C

2.9 a, b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5mJ

Maximum Power Dissipation

TC = 25 °C

PD

20.8

W

TC = 70 °C

13.3

TA = 25 °C

3.2 a, b

TA = 70 °C

3 a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) c, d

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, e

t

≤ 10 s

RthJA

31

39

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

4.8

6

Similar Part No. - SISA34DN

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SISA34DN	622Kb / 13P	N-Channel 30 V (D-S) MOSFET 08-Feb-17

More results

Similar Description - SISA34DN

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

More results

SISA34DN Datasheet(PDF) 1 Page - Vishay Siliconix

SISA34DN Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SISA34DN

Similar Description - SISA34DN

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL