MJW18020G datasheet(3/5 Pages) ONSEMI

Part #	MJW18020G

Description	NPN Silicon Power Transistors High Voltage Planar

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Manufacturer	ONSEMI [ON Semiconductor]

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MJW18020

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain, VCE = 2.0 V

0.01

0.1

1.0

10

1.0

10

100

0.0

0.1

1.0

10.0

100.0

0.001

0.01

0.1

1.0

10

100

0.1

1.0

10.0

0.001

0.01

0.1

1.0

10

100

0.01

0.1

1.0

10

1.0

10

100

Figure 2. DC Current Gain, VCE = 5.0 V

0.1

1.0

10.0

0.001

0.01

0.1

1.0

10

100

0.0

0.1

1.0

10.0

100.0

0.001

0.01

0.1

1.0

10

100

Figure 3. Typical Collector−Emitter Saturation

Voltage, IC/IB = 5.0

Figure 4. Typical Collector−Emitter Saturation

Voltage, IC/IB = 10

Figure 5. Typical Base−Emitter Saturation

Voltage, IC/IB = 5.0

Figure 6. Typical Base−Emitter Saturation

Voltage, IC/IB = 10

IC, COLLECTOR CURRENT (A)

TJ = 25°C

TJ = −20°C

TJ = 125°C

TJ = 25°C

TJ = −20°C

TJ = 125°C

TJ = 25°C

TJ = −20°C

TJ = 125°C

TJ = 25°C

TJ = −20°C

TJ = 125°C

Ic/Ib = 10

Ic/Ib = 5.0

VCE = 2.0 V

VCE = 5.0 V

TJ = 25°C

Ic/Ib = 10

Ic/Ib = 5.0

TJ = −20°C

TJ = 125°C

TJ = 25°C

TJ = −20°C

TJ = 125°C

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