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2N7002LT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N7002LT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page 2N7002L http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mAdc) V(BR)DSS 60 − − Vdc Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 60 Vdc) TJ = 125°C IDSS − − − − 1.0 500 mAdc Gate−Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF − − 100 nAdc Gate−Body Leakage Current, Reverse (VGS = − 20 Vdc) IGSSR − − −100 nAdc ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 − 2.5 Vdc On−State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 − − mA Static Drain−Source On−State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) − − − − 3.75 0.375 Vdc Static Drain−Source On−State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C rDS(on) − − − − − − − − 7.5 13.5 7.5 13.5 Ohms Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) gFS 80 − − mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 5.0 pF SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, td(on) − − 20 ns Turn−Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 W, RL = 50 W, Vgen = 10 V) td(off) − − 40 ns BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = 11.5 mAdc, VGS = 0 V) VSD − − −1.5 Vdc Source Current Continuous (Body Diode) IS − − −115 mAdc Source Current Pulsed ISM − − − 800 mAdc 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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