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STE110NS20FD Datasheet(PDF) 1 Page - STMicroelectronics

Part # STE110NS20FD
Description  N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE110NS20FD Datasheet(HTML) 1 Page - STMicroelectronics

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January 2002
STE110NS20FD
N-CHANNEL 200V - 0.022
Ω - 110A ISOTOP
MESH OVERLAY™ Power MOSFET
(1)ISD ≤110A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
n
TYPICAL RDS(on) = 0.022Ω
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
GATE CHARGE MINIMIZED
n
± 20V GATE TO SOURCE VOLTAGE RATING
n
LOW INTRINSIC CAPACITANCE
n
FAST BODY-DRAIN DIODE:LOW trr, Qrr
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, gives the lowest RDS(ON) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLY (SMPS)
n
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STE110NS20FD
200V
< 0.024
Ω
110 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
200
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuos) at TC = 25°C
110
A
ID
Drain Current (continuos) at TC = 100°C
69
A
IDM (l)
Drain Current (pulsed)
440
A
PTOT
Total Dissipation at TC = 25°C
500
W
Derating Factor
4
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
25
V/ns
VISO
Insulation Winthstand Voltage (AC-RMS)
2500
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
ISOTOP
INTERNAL SCHEMATIC DIAGRAM


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