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TSDP343 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSDP343
Description  IR Receiver Modules for Data Transmission
Download  7 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSDP343 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSDP341.., TSDP343..
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 22-Aug-14
2
Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Output Active Low
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Supply voltage
VS
-0.3 to +6
V
Supply current
IS
3mA
Output voltage
VO
-0.3 to (VS + 0.3)
V
Output current
IO
5mA
Junction temperature
Tj
100
°C
Storage temperature range
Tstg
-25 to +85
°C
Operating temperature range
Tamb
-25 to +85
°C
Power consumption
Tamb
≤ 85 °C
Ptot
10
mW
Soldering temperature
t
≤ 10 s, 1 mm from case
Tsd
260
°C
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply current
Ev = 0, VS = 3.3 V
ISD
0.27
0.35
0.45
mA
Ev = 40 klx, sunlight
ISH
0.45
mA
Supply voltage
VS
2.5
5.5
V
Transmission distance
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 150 mA
d35
m
Output voltage low
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
100
mV
Minimum irradiance
Pulse width tolerance:
tpi - 1/f0 < tpo < tpi + 4/f0,
test signal see fig. 1
Ee min.
0.15
0.30
mW/m2
Maximum irradiance
tpi - 1/f0 < tpo < tpi + 4/f0,
test signal see fig. 1
Ee max.
30
W/m2
Maximum pulse width
Ee min. > 10 mW/m2, tpi = 8/f0
tpo max.
11.5/f0
s
Directivity
Angle of half transmission
distance
ϕ1/2
± 45
deg
Ee
T
tpi *)
t
VO
VOH
VOL
tpo
2)
t
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, N = 6 pulses, f = f0, t = 10 ms)
Output Signal
td
1)
1) 3/f
0 < td < 9/f0
2) t
pi - 1/f0 < tpo < tpi + 4/f0
*) tpi ≥ 6/f0 is recommended for optimal function
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.1
10
1000
100 000
E
e - Irradiance (mW/m
2)
Output pulse width
Input burst length
Optical test signal,
λ = 940 nm,
f = 38 kHz, N = 8 carrier cycles


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