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MR16R0828BN1-CG6 Datasheet(PDF) 2 Page - Samsung semiconductor |
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MR16R0828BN1-CG6 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 4 page SERIAL PRESENCE DETECT MR16R0824(6/8/C/G)BN1 - 2 - RAMBUS MODULE Version 1.1 Oct. 2000 • Contents ; Byte # (Dec) Described Function Option Field Width Units Supported Function Hex Value Note K8 K7 G6 K8 K7 G6 0 SPD Revision Level 8 LUT SPD Revision 1.0 02h 1 1 Total Number of Bytes in the SPD 8 LUT 256 Bytes 08h 1 2 Device Type 8 LUT Direct RDRAM 01h 1 3 Module Type 8 LUT RIMM Module 01h 1 4 Row Address Bits[3:0], Column Address Bits[3:0] 4,4 bits 9 bits, 6 bits 96h 5 Bank Address Bits and Type 8 LUT 32s banks C5h 1 6 Refresh Bank Bits 3 bits 32 Refresh Bank Sets 05h 7 Refresh Period(=tREF) 8 ms 32ms 20h 8 Protocol Version 8 LUT Protocol Version 1 02h 1 9 Misc. Device Configuration Field 8 n/a DQS=1.5, no -LP, S28, S3 05h 3 10 Minimum Precharge to RAS time(=tRP-R,Min ) 5 1/fRAS 8cycles 8cycles 8cycles 08h 08h 08h 11 Minimum RAS to Precharge time(=tRAS-R,Min) 6 1/fRAS 20cycles 20cycles 20cycles 14h 14h 14h 12 Minimum RAS to CAS time(=tRCD-R,Min) 5 1/fRAS 10cycles 8cycles 8cycles 0Ah 08h 08h 13 Minimum RAS to RAS time(=tRR-R,Min) 5 1/fRAS 8cycles 8cycles 8cycles 08h 08h 08h 14 Minimum Precharge to Precharge time(=tPP-R,Min) 5 1/fRAS 8cycles 8cycles 8cycles 08h 08h 08h 15 Min tCYCLE for Range A 8 128ps 2.50ns 2.80ns 3.33ns 13h 15h 1Ah 16 Max tCYCLE for Range A 8 128ps 3.83ns 3.83ns 3.83ns 1Eh 1Eh 1Eh 17 tCDLY Range for Range A 8 tCYCLE 5tCYCLE ~ 9tCYCLE 5tCYCLE ~ 9tCYCLE 5tCYCLE ~ 9tCYCLE 59h 59h 59h 18 tCLS and tCAS Range for Range A 8 tCYCLE 2tCYCLE for tCLS & tCAS AAh 19 Min tCYCLE for Range B 8 128ps RFU 00h 2 20 Max tCYCLE for Range B 8 128ps RFU 00h 2 21 tCDLY Range for Range B 8 tCYCLE RFU 00h 2 22 tCLS and tCAS Range for Range B 8 tCYCLE RFU 00h 2 23 Min tCYCLE for Range C 8 128ps RFU 00h 2 24 Max tCYCLE for Range C 8 128ps RFU 00h 2 25 tCDLY Range for Range C 8 tCYCLE RFU 00h 2 26 tCLS and tCAS Range for Range C 8 tCYCLE RFU 00h 2 27 Min tCYCLE for Range D 8 128ps RFU 00h 2 28 Max tCYCLE for Range D 8 128ps RFU 00h 2 29 tCDLY Range for Range D 8 tCYCLE RFU 00h 2 30 tCLS and tCAS Range for Range D 8 tCYCLE RFU 00h 2 31 Power Down Exit Max.time, Phase A(=tPDNXA,Max) 8 us 4us 04h 32 Power Down Exit Max.time, Phase B(=tPDNXB,Max) 8 64tCYCLE 9000tCYCLE 8Dh 33 Nap Exit Max.time, Phase A(=tNAPXA,Max) 8 ns 50ns 32h 34 Nap Exit Max.time, Phase B(=tNAPXB,Max) 8 ns 40ns 28h 35 fIMIN[11:8] fIMAX[11:8] 4 4 MHz 261MHz 400MHz 261MHz 357MHz 261MHz 300MHz 11h 11h 11h 36 fIMIN[7:0] 8 MHz 261MHz 261MHz 261MHz 05h 05h 05h 37 fIMAX[7:0] 8 MHz 400MHz 357MHz 300MHz 90h 65h 2Ch 38 ODF mapping - - - 00h 1 MR16R082C(G)BN1-CK8/CK7/CG6 • Feature : Double Sided Module & 1,250 mil height • Composition : 8Mx16 *12(16)pcs • Used component type & part number Normal Package (K4R271669B-NCK8/NCK7/NCG6) Mirrored Package (K4R271669B-MCK8/MCK7/MCG6) • # of banks in component :32s banks (Doubled with Split Banks) • Refresh : 16K/32ms MR16R0824(6/8)BN1-CK8/CK7/CG6 • Feature : Single Sided Module & 1,250 mil height • Composition : 8Mx16 *4(6/8)pcs • Used component type & part number Normal Package (K4R271669B-NCK8/NCK7/NCG6) • # of banks in component : 32s banks (Doubled with Split Banks) • Refresh : 16K/32ms 1 2 |
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