© Semiconductor Components Industries, LLC, 2014

July, 2014 − Rev. 2

Publication Order Number:

BAT54M3/D

BAT54M3T5G

Schottky Barrier Diode

This Schottky barrier diode is designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

The BAT54M3T5G device is a spin−off of our popular SOT−23

three−leaded device and is housed in the SOT−723 surface mount

package. This device is ideal for low−power surface mount

applications where board space is at a premium.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Forward Power Dissipation

Derate above 25

°C

200

2.0

mW

mW/

°C

Forward Current (DC)

200 Max

mA

Non−Repetitive Peak Forward Current

600

mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec, Duty Cycle =

66%

300

mA

Junction Temperature

− 55 to +125

°C

Storage Temperature Range

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

30 V

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODE

3

CATHODE

1

ANODE

http://onsemi.com

Device

Package

ORDERING INFORMATION

BAT54M3T5G

SOT−723

(Pb−Free)

8000/Tape & Reel

SOT−723

CASE 631AA

STYLE 2

MARKING

DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

AP = Specific Device Code

M

= Date Code

AP M

1

3

2

1

NSVBAT54M3T5G

SOT−723

(Pb−Free)

8000/Tape & Reel