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GBS6M Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Part # GBS6M
Description  Silicon Bridge Rectifiers
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

GBS6M Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Silicon Bridge Rectifiers
GBS6A--GBS6M
Document Number:GBS802AA
www.gmicroelec.com
1
FEATURES
Rating to 1000V PRV
Surge overload rating to 140 Amperes peak
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
Symbol
GBS
6A
GBS
6B
GBS
6D
GBS
6G
GBS
6J
GBS
6K
GBS
6M
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
50Hz sine wave, R-load Without heat sink Ta=25℃
50Hz sine wave, R-load With heat sink
Tc=50℃
IF(AV)
2.3
6.0
A
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
IFSM
140
A
Thermal Characteristics
Characteristic
Symbol
GBS
6A
GBS
6B
GBS
6D
GBS
6G
GBS
6J
GBS
6K
GBS
6M
UNITS
Rating for fusing (t < 8.3 ms)
I2t
82
A2s
Typical junction capacitance per diode
CJ
95
40
pF
Typical thermal resistance
RθJA
RθJC
22
3.5
°C/W
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Value
UNITS
Maximum instantaneous forward voltage @3.0A
VF
1.05
V
Maximum reverse current
@TA=25 ℃
at rated DC blocking voltage
@TA=100℃
IR
5.0
500
μ A
Pb
Lead-free


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