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SiP32409DNP-T1-GE4 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SiP32409DNP-T1-GE4 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 14 page Document Number: 63717 S13-0971-Rev. F, 06-May-13 www.vishay.com 3 Vishay Siliconix SiP32408, SiP32409 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: powerictechsupport@vishay.com Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. d. Not tested, guarantee by design. SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VIN = 5 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits - 40 °C to 85 °C Unit Min.a Typ.b Max.a Operating Voltagec VIN 1.1 - 5.5 V Quiescent Current IQ VIN = 1.2 V, EN = active - 10.5 17 µA VIN = 1.8 V, EN = active - 21 30 VIN = 2.5 V, EN = active - 34 50 VIN = 3.6 V, EN = active - 54 90 VIN = 4.3 V, EN = active - 68 110 VIN = 5 V, EN = active - 105 180 Off Supply Current IQ(off) EN = inactive, OUT = open - - 1 Off Switch Current IDS(off) EN = inactive, OUT = GND - - 1 Reverse Blocking Current IRB VOUT = 5 V, VIN = 0 V, VEN = inactive -- 10 On-Resistance RDS(on) VIN = 1.2 V, IL = 100 mA, TA = 25 °C - 45 52 m VIN = 1.8 V, IL = 100 mA, TA = 25 °C - 42 50 VIN = 2.5 V, IL = 100 mA, TA = 25 °C - 42 50 VIN = 3.6 V, IL = 100 mA, TA = 25 °C -42 50 VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 42 50 VIN = 5 V, IL = 100 mA, TA = 25 °C -44 50 On-Resistance Temp.-Coefficient TCRDS - 3300 - ppm/°C EN Input Low Voltagec VIL VIN = 1.2 V -- 0.3 V VIN = 1.8 V -- 0.4d VIN = 2.5 V -- 0.5d VIN = 3.6 V -- 0.6d VIN = 4.3 V -- 0.7d VIN = 5 V -- 0.8d EN Input High Voltagec VIH VIN = 1.2 V 0.9d -- VIN = 1.8 V 1.2d -- VIN = 2.5 V 1.4d -- VIN = 3.6 V 1.6d -- VIN = 4.3 V 1.7d -- VIN = 5 V 1.8 - - EN Input Leakage ISINK VEN = 5.5 V - 1 - 1 µA Output Pulldown Resistance RPD EN = inactive, TA = 25 °C, (for SiP32409 only) - 217 280 Output Turn-On Delay Time td(on) VIN = 3.6 V, RLOAD = 10 , TA = 25 °C -1.8 - ms Output Turn-On Rise Time t(on) 1.2 2.5 3.8 Output Turn-Off Delay Time td(off) -- 0.001 |
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