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IXTH7P50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH7P50 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2001 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C -500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ -500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C 7P50 -7 A 8P50 -8 A I DM T C = 25 °C, pulse width limited by T J 7P50 -28 A 8P50 -32 A I AR T C = 25 °C 7P50 -7 A 8P50 -8 A E AR T C = 25 °C30 mJ P D T C = 25 °C 180 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque 1.13/10 Nm/lb.in. Weight 6g TO-247 AD G = Gate, D = Drain, S = Source, TAB = Drain D (TAB) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated 94534E (6/01) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = -250 µA -500 V BV DSS Temperature Coefficient 0.054 %/K V GS(th) V DS = VGS, ID = -250 µA -3.0 -5.0 V V GS(th) Temperature Coefficient -0.122 %/K I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 V DSS T J = 25 °C -200 µA V GS = 0 V T J = 125 ° C-1 mA R DS(on) V GS = -10 V, ID = 0.5 I D25 7P50 1.5 Ω 8P50 1.2 Ω R DS(on) Temperature Coefficient 0.6 %/K Features •Internationalstandardpackage JEDEC TO-247 AD •Low R DS (on) HDMOS TM process •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance(<5nH) - easy to drive and to protect Applications • Highsideswitching • Push-pullamplifiers • DC choppers • Automatictestequipment Advantages • Easytomountwith1screw (isolated mounting screw hole) • Space savings • High power density V DSS I D25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Ω IXTH 8P50 -500V -8 A 1.2 Ω |
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