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IXTH7P50 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTH7P50
Description  Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH7P50 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
-500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
-500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C
7P50
-7
A
8P50
-8
A
I
DM
T
C
= 25
°C, pulse width limited by T
J
7P50
-28
A
8P50
-32
A
I
AR
T
C
= 25
°C
7P50
-7
A
8P50
-8
A
E
AR
T
C
= 25
°C30
mJ
P
D
T
C
= 25
°C
180
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6g
TO-247 AD
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D (TAB)
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
94534E (6/01)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = -250 µA
-500
V
BV
DSS Temperature Coefficient
0.054
%/K
V
GS(th)
V
DS = VGS, ID = -250 µA
-3.0
-5.0
V
V
GS(th) Temperature Coefficient
-0.122
%/K
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = 0.8
V
DSS
T
J =
25
°C
-200
µA
V
GS = 0 V
T
J = 125 ° C-1
mA
R
DS(on)
V
GS = -10 V, ID = 0.5
I
D25
7P50
1.5
8P50
1.2
R
DS(on) Temperature Coefficient
0.6
%/K
Features
Internationalstandardpackage
JEDEC TO-247 AD
Low R
DS (on) HDMOS
TM process
Ruggedpolysilicongatecellstructure
UnclampedInductiveSwitching(UIS)
rated
Lowpackageinductance(<5nH)
- easy to drive and to protect
Applications
Highsideswitching
Push-pullamplifiers
DC choppers
Automatictestequipment
Advantages
Easytomountwith1screw
(isolated mounting screw hole)
Space savings
High power density
V
DSS
I
D25 RDS(on)
IXTH 7P50
-500V -7 A 1.5
IXTH 8P50
-500V -8 A 1.2


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