MBR2535CTG, MBR2545CTG

http://onsemi.com

2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

MBR2535CTG

MBR2545CTG

35

45

V

Average Rectified Forward Current

Per Device

Per Diode

30

15

A

Peak Repetitive Forward Current

30

A

Non-Repetitive Peak Surge Current per Diode Leg

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)

150

A

Peak Repetitive Reverse Surge Current (2.0

ms, 1.0 kHz)

1.0

A

Storage Temperature Range

−65 to +175

°C

Operating Junction Temperature (Note 1)

−65 to +175

°C

dv/dt

10,000

V/

ms

ESD Ratings:

Machine Model = C

Human Body Model = 3B

ESD

> 400

> 8000

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction-to-Case

Junction-to-Ambient (Note 2)

1.5

50

°C/W

2. When mounted using minimum recommended pad size on FR−4 board.

Symbol

Characteristic

Condition

Min

Typ

Max

Unit

Instantaneous Forward Voltage

(Note 3)

−

−

−

−

−

0.50

−

0.65

0.62

0.57

0.82

0.72

V

Instantaneous Reverse Current

(Note 3)

−

−

−

9.0

0.2

25

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.