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4/1/04

Notes

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Description

This Digital Audio HEXFET

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

PD - 95850

Features

Amplifier Applications

Efficiency

Ruggedness

Reliability

S

D

G

DIGITAL AUDIO MOSFET

-55

V

93

m

:

150

m

:

31

nC

175

°C

Key Parameters

IRLR9343

IRLU9343

IRLU9343-701

I-Pak Leadform 701

IRLU9343-701

Refer to page 10 for package outline

D-Pak

IRLR9343

I-Pak

IRLU9343

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

W

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Clamping Pressure

h

N

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

g

–––

1.9

Junction-to-Ambient (PCB Mounted)

gj

–––

50

°C/W

Junction-to-Ambient (free air)

g

–––

110

Max.

-14

-60

±20

-55

-20

-40 to + 175

–––

79

39

0.53