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STW18NK80Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STW18NK80Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STW18NK80Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 150 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 10 A 0.34 0.38 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15V, ID =10A 19 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 6100 500 100 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 640V 240 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD =400 V, ID =9 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 46 32 140 32 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =640V, ID =18 A, VGS =10V 192 34 102 250 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 19 76 A A VSD (1) Forward On Voltage ISD =19A,VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A, di/dt = 100A/µs VDD =40 V,Tj = 25°C (see test circuit, Figure 5) 920 11 24 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A, di/dt = 100A/µs VDD =40 V,Tj = 150°C (see test circuit, Figure 5) 1160 15 25.8 ns µC A |
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