SIHH11N60E datasheet(2/9 Pages) VISHAY

Part #	SIHH11N60E

Description	Reduced switching and conduction losses

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 9 page

SiHH11N60E

www.vishay.com

Vishay Siliconix

S15-2031-Rev. A, 24-Aug-15

2

Document Number: 91651

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

42

55

°C/W

Maximum Junction-to-Case (Drain)

RthJC

0.76

1.10

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

600

-

V

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.66

-

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

± 100

nA

VGS = ± 30 V

-

± 1

μA

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

-

1

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

-

50

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 5.5 A

-

0.295

0.339

Ω

Forward Transconductance

gfs

VDS = 30 V, ID = 5.5 A

-

3.7

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

-

1076

-

pF

Output Capacitance

Coss

-56

-

Reverse Transfer Capacitance

Crss

-6

-

Effective Output Capacitance, Energy

Related a

Co(er)

VDS = 0 V to 480 V, VGS = 0 V

-52

-

Effective Output Capacitance, Time

Related b

Co(tr)

-

174

-

Total Gate Charge

Qg

VGS = 10 V

ID = 5.5 A, VDS = 480 V

-31

62

nC

Gate-Source Charge

Qgs

-7

-

Gate-Drain Charge

Qgd

-13

-

Turn-On Delay Time

td(on)

VDD = 480 V, ID = 5.5 A,

VGS = 10 V, Rg = 9.1

Ω

-16

32

ns

Rise Time

tr

-21

42

Turn-Off Delay Time

td(off)

-39

68

Fall Time

tf

-21

42

Gate Input Resistance

Rg

f = 1 MHz, open drain

0.2

0.7

1.5

Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

11

A

Pulsed Diode Forward Current

ISM

--

27

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 5.5 A, VGS = 0 V

-

0.9

1.2

V

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 5.5 A,

dI/dt = 100 A/μs, VR = 25 V

-

280

560

ns

Reverse Recovery Charge

Qrr

-3.0

6.0

μC

Reverse Recovery Current

IRRM

-20

-

A

S

D

G

Similar Part No. - SIHH11N60E

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIHH11N60E	197Kb / 9P	E Series Power MOSFET 01-Jan-2022
	SIHH11N60EF	212Kb / 9P	EF Series Power MOSFET with Fast Body Diode Rev. A, 21-Dec-15
	SIHH11N60EF-T1-GE3	202Kb / 9P	EF Series Power MOSFET with Fast Body Diode 01-Jan-2022
	SIHH11N60EF	202Kb / 9P	EF Series Power MOSFET with Fast Body Diode 01-Jan-2022
	SIHH11N60E	197Kb / 9P	E Series Power MOSFET 01-Jan-2022

More results

Similar Description - SIHH11N60E

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIHJ10N60E	156Kb / 7P	Reduced switching and conduction losses Rev. B, 16-Jan-17
	SIHH14N60E	196Kb / 9P	Reduced switching and conduction losses Rev. B, 07-Sep-15
	SIHG33N60E	198Kb / 8P	Reduced switching and conduction losses Rev. F, 02-May-16
	SIHP38N60E	143Kb / 7P	Reduced switching and conduction losses Rev. A, 04-Jul-16
	SIHH21N60E	195Kb / 9P	Reduced switching and conduction losses Rev. A, 24-Aug-15
STMicroelectronics	STS15N4LLF5	588Kb / 12P	Conduction losses reduced April 2010 Rev 1
STMicroelectronics	STH240N75F3-2	878Kb / 18P	Conduction losses reduced July 2012 Rev 2
International Rectifier	IRF6633APBF	268Kb / 9P	Low Conduction Losses and Switching Losses
	IRF6637PBF	270Kb / 10P	Low Conduction Losses and Switching Losses
	IRF6633PBF	283Kb / 10P	Low Conduction Losses and Switching Losses

More results

SIHH11N60E Datasheet(PDF) 2 Page - Vishay Siliconix

SIHH11N60E Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SIHH11N60E

Similar Description - SIHH11N60E

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL