FUJITSU SEMICONDUCTOR

DATA SHEET

Copyright 2013-2016 FUJITSU SEMICONDUCTOR LIMITED

2016.10

Memory FRAM

1M (128 K

× 8) Bit SPI

MB85RS1MT

■ DESCRIPTION

MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072

words

× 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS1MT adopts the Serial Peripheral Interface (SPI).

The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM.

no wait time.

■ FEATURES

• Bit configuration

: 131,072 words

× 8 bits

• Serial Peripheral Interface

: SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency

: 1.8 V to 2.7 V, 25 MHz (Max)

2.7 V to 3.6 V, 30 MHz (Max)

For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)

• High endurance

• Data retention

: 10 years (+85

°C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage

: 1.8 V to 3.6 V

• Low power consumption

: Operating power supply current 9.5 mA (Max@30 MHz)

Standby current 120

μA (Max)

Sleep current 10

μA (Max)

• Operation ambient temperature range : -40

°C to +85 °C

• Package

: 8-pin plastic SOP (FPT-8P-M02)

8-pin plastic WLP (WLP-8P-M01)

8-pin plastic DIP (DIP-8P-M03)

RoHS compliant

DS501-00022-6v0-E