FUJITSU SEMICONDUCTOR

DATA SHEET

Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED

2016.10

Memory FRAM

64 K (8 K

MB85RC64TA

■ DESCRIPTION

The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192

words

× 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be

The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash

■ FEATURES

• Bit configuration

: 8,192 words

× 8 bits

• Two-wire serial interface

: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency

: 3.4 MHz (Max @HIGH SPEED MODE)

1 MHz (Max @FAST MODE PLUS)

• Read/write endurance

• Data retention

: 10 years (

+ 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption

: Operating power supply current 170

μA (Typ @3.4 MHz)

Standby current 8

μA (Typ)

Sleep current 4

μA (Typ)

• Operation ambient temperature range :

− 40 °C to + 85 °C

• Package

: 8-pin plastic SOP (FPT-8P-M09)

8-pin plastic SON (LCC-8P-M04)

RoHS compliant

DS501-00044-2v0-E