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FDU6680 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDU6680 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  November 2004 ©2004 Fairchild Semiconductor Corporation FDD6680/FDU6680 Rev. C1(W) FDD6680 / FDU6680 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor Drives Features • 46 A, 30 V RDS(ON) = 10 m Ω @ V GS = 10 V RDS(ON) = 15 m Ω @ V GS = 4.5 V • Low gate charge • Fast Switching Speed • High performance trench technology for extremely low RDS(ON) G S D TO-252 D-PAK (TO-252) G D S I-PAK (TO-251AA) S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 46 A @TA=25°C (Note 1a) 12 Pulsed (Note 1a) 100 Power Dissipation @TC=25°C (Note 3) 56 @TA=25°C (Note 1a) 3.3 PD @TA=25°C (Note 1b) 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 RθJA (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6680 FDD6680 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6680 FDU6680 I-PAK (TO-251) Tube N/A 75 |
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Similar Description - FDU6680 |
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