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AS1124 Datasheet(PDF) 6 Page - List of Unclassifed Manufacturers |
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AS1124 Datasheet(HTML) 6 Page - List of Unclassifed Manufacturers |
6 / 21 page AS1124 Akros Silicon, inc. 6399 San Ignacio Avenue, Suite 250, San Jose, CA 95119 USA 408.746.9000 www.AkrosSilicon.com 6 Typical specifications are not 100% tested. Performance guaranteed by design and/or other correlation methods. Gate Drive Dynamic Response PDRV TR, TF NDRV TR, TF 2.2 2 nS nS 10% - 90% with CLoad = 1 nF VPK, peak current sense threshold voltage at CS 500 600 700 mV Ipeak=Vpk/Rsense Max. duty cycle 80 % Internally limited Min. duty cycle 6 % Internally limited VBN 4.7 V Low side internal supply voltage; sets VOH of NDRV. VBP (relative to VDD48O) -5 V High side internal supply voltage; sets VOL of PDRV. Error amplifier reference voltage 1.45 1.55 V Compared to input of the FB pin Soft start ramp time 2 ms Conditions: CSS=100nF COMP source current 30 µA FB = 0V, COMP=0V COMP sink current 30 µA FB = 5V, COMP=5V Open loop voltage gain 80 dB Small signal unity gain bandwidth 5 MHz COMP connected to FB. FB leakage (source or sink) 1 µA 0V>FB>4.5V Local Power Mode LVMODE Threshold 2.1 2.4 V LVMODE Hysteresis 100 mV LVMODE Operating Voltage 10 57 V Thermal Protection Thermal shutdown temperature 165 °C Above this Temp., the AS1124 is disabled. Max. on-die operating temperature 140 °C Current reduction temperature threshold 145 °C Temperature at which thermal current reduction is applied Thermal current reduction 50 % Thermal current reduction hysteresis 20 °C Temperature change required to restore full operation after thermal current reduction Thermal shutdown hysteresis 40 °C Temperature change required to restore full operation after thermal shutdown Table 5 – Package Thermal Characteristic Description Min Typical 1 Max Units Comments Thermal Resistance, Junction to Ambient, θJA, 31 ºC/W 20 lead QFN package Power dissipation, PDISS 2.4 W 20W Output, (12V output at 1.7A) |
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