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WFP2N60B Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP2N60B Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  W W W WFP2N6 FP2N6 FP2N6 FP2N60 0 0 0B B B B Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Silic Silic Silic Silico o o on n n n N-C N-C N-C N-Ch h h ha a a an n n nnel nel nel nel MOS MOS MOS MOSF F F FET ET ET ET Features ■ 2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150 ℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. Absolute Maximum Ratings G G G G D D D D S S S S T T T TO O O O220 220 220 220 Symbol Parameter Value Units VDSS Drain Source Voltage 600 V ID Continuous Drain Current(@Tc=25 ℃) 2.0 A Continuous Drain Current(@Tc=100 ℃) 1.3 A IDM Drain Current Pulsed (Note1) 8 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 140 mJ EAR Repetitive Avalanche Energy (Note 1) 6.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Total Power Dissipation(@Tc=25 ℃) 54 W Derating Factor above 25 ℃ 0.43 W/ ℃ TJ, Tstg Junction and Storage Temperature -55~150 ℃ TL Maximum lead Temperature for soldering purposes 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance, Junction-to-Case - - 2.3 ℃/W RQCS Thermal Resistance, Case-to-Sink 0.5 - - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev. D Nov.2009 T02-2 |
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