MBR2535CTLG datasheet(2/4 Pages) ONSEMI

Part #	MBR2535CTLG

Description	Switch-mode Power Rectifier

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 4 page

MBR2535CTLG

www.onsemi.com

2

MAXIMUM RATINGS (Per Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

35

V

Average Rectified Forward Current

(TC = 142°C per Diode)

(TC = 142°C per Device)

IF(AV)

12.5

25

A

Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C)

IFRM

25

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)

IFSM

150

A

Peak Repetitive Reverse Surge Current (2.0

ms, 1.0 kHz)

IRRM

1.0

A

Storage Temperature Range

Tstg

−65 to +150

°C

Operating Junction Temperature (Note 1)

TJ

−65 to +150

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/

ms

Controlled Avalanche Energy

Waval

20

mJ

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Conditions

Symbol

Max

Unit

Maximum Thermal Resistance, Junction−to−Case

Min. Pad

RqJC

2.0

°C/W

Maximum Thermal Resistance, Junction−to−Ambient

Min. Pad

RqJA

75.0

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typical

Max

Unit

Instantaneous Forward Voltage (Note 2)

(iF = 25 Amps, Tj = 25°C)

(iF = 12.5 Amps, Tj = 25°C)

(iF = 12.5 Amps, Tj = 125°C)

vF

−

0.51

0.41

0.33

0.55

0.47

0.41

V

Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, Tj = 25

°C)

(Rated dc Voltage, Tj = 125

°C)

iR

−

0.8

300

5.0

500

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

Similar Part No. - MBR2535CTLG

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MBR2535CTLG	52Kb / 4P	SWITCHMODE Power Rectifier August, 2006 ??Rev. 4
ON Semiconductor	MBR2535CTLG	111Kb / 4P	SWITCHMODE Power Rectifier May, 2008 ??Rev. 5

More results

Similar Description - MBR2535CTLG

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MUR1620CTRG	78Kb / 6P	Switch Mode Power Rectifier January, 2015 ??Rev. 9
	MBR4015CTLG	84Kb / 4P	Switch-mode Power Rectifier January, 2015 ??Rev. 7
	MBR40L45CTG	100Kb / 6P	Switch-mode Power Rectifier January, 2015 ??Rev. 3
	MURHF860CT	55Kb / 3P	Switch-mode Power Rectifier July, 2016 ??Rev. 6
	MBR30L45CTG	76Kb / 7P	Switch-mode Power Rectifier July, 2016 ??Rev. 3
	MBR30L60CTG	85Kb / 7P	Switch-mode Power Rectifier July, 2016 ??Rev. 2
	MBR20H100CTG	122Kb / 9P	Switch-mode Power Rectifier January, 2015 ??Rev. 12
	MBR6045WTG	57Kb / 3P	Switch Mode Power Rectifier July, 2014 ??Rev. 10
	MBRP400100CTL	117Kb / 3P	Switch-mode Power Rectifier January, 2015 ??Rev. 6
	MUR550APFG	351Kb / 13P	Switch-mode Power Rectifier August, 2020 - Rev. 11
	MUR620CTG	64Kb / 4P	Switch Mode Power Rectifier January, 2015 ??Rev. 5

More results

MBR2535CTLG Datasheet(PDF) 2 Page - ON Semiconductor

MBR2535CTLG Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - MBR2535CTLG

Similar Description - MBR2535CTLG

Html Pages

1 2 3 4

Datasheet Download

Link URL