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AM29LV800B-100 Datasheet(PDF) 2 Page - Advanced Micro Devices |
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AM29LV800B-100 Datasheet(HTML) 2 Page - Advanced Micro Devices |
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2 / 48 page  2 Am29LV800T/Am29LV800B PRELIMINARY GENERAL DESCRIPTION The Am29LV800 is an 8 Mbit, 3.0 Volt-only Flash mem- ory organized as 1 Mbyte of 8 bits each or 512K words of 16 bits each. For flexible erase and program capabil- ity, the 8 Mbits of data is divided into 19 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbytes. The x8 data appears on DQ0–DQ7; the x16 data appears on DQ0–DQ15. The Am29LV800 is of- fered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 3.0 Volt VCC supply. The device can also be reprogrammed in standard EPROM programmers. The Am29LV800 provides two levels of performance. The first level offers access times as fast as 100 ns with a VCC range as low as 2.7 volts, which is optimal for battery powered applications. The second level offers a 90 ns access time, optimizing performance in systems where the power supply is in the regulated range of 3.0 to 3.6 volts. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The Am29LV800 is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cy- cles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. The Am29LV800 is programmed by executing the pro- gram command sequence. This will invoke the Embed- ded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will in- voke the Embedded Erase Algorithm which is an inter- nal algorithm that automatically pre-programs the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. This device also features a sector erase architecture. This allows for sectors of memory to be erased and re- programmed without affecting the data contents of other sectors. A sector is typically erased and verified within 1.0 second. The Am29LV800 is fully erased when shipped from the factory. The Am29LV800 device also features hardware sector protection. This feature will disable both program and erase operations in any combination of nineteen sec- tors of memory. AMD has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from or program data to a sector that was not being erased. Thus, true background erase can be achieved. The device features single 3.0 Volt power supply oper- ation for both read and write functions. Internally gen- erated and regulated voltages are provided for the program and erase operations. A low VCC detector au- tomatically inhibits write operations during power tran- sitions. The end of program or erase is detected by the RY/BY pin. Data Polling of DQ7, or by the Toggle Bit (DQ6). Once the end of a program or erase cycle has been completed, the device automatically resets to the read mode. The Am29LV800 also has a hardware RESET pin. When this pin is driven low, execution of any Embed- ded Program Algorithm or Embedded Erase Algorithm will be terminated. The internal state machine will then be reset into the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device will be auto- matically reset to the read mode and will have errone- ous data stored in the address locations being operated on. These locations will need rewriting after the Reset. Resetting the device will enable the sys- tem’s microprocessor to read the boot-up firmware from the Flash memory. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. The Am29LV800 memory electrically erases all bits within a sector simultaneously via Fowler- Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM program- ming mechanism of hot electron injection. |
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Similar Description - AM29LV800B-100 |
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