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WFF5N65L Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF5N65L Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 8 page  www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 2/8 WFF5N65L Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain Cut -off current IDSS VDS=650V,VGS=0V - - 1.0 µA VDS=500V,Tc=125℃ - - 100 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 650 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=2.0A - 2.4 2.8 Ω Forward Transconductance gfs VDS=15V,ID=2.0A - 3.5 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 611 - pF Reverse transfer capacitance Crss - 3.6 - Output capacitance Coss - 54 - Switching time Turn-on Rise time tr VDD=325V, ID=4A RG=10Ω (Note3,4) - 16 - ns Turn-on delay time Td(on) - 14 - Turn-off Fall time tf - 11 - Turn-off delay time Td(off) - 32 - Total gate charge(gate-source plus gate-drain) Qg VDD=520V, VGS=10V, ID=4A (Note3,4) - 14.5 - nC Gate-source charge Qgs - 3.0 - Gate-drain("miller") Charge Qgd - 6.5 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 4 A Pulse drain reverse current IDRP - - - 16 A Forward voltage(diode) VDSF IDR=4A,VGS=0V - - 1.5 V Reverse recovery time trr IDR=4A,VGS=0V, dIDR /dt =100 A /µs - 256 - ns Reverse recovery charge Qrr - 1.2 - µC Reverse recovery current Irrm - 9.4 - A Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=10mH IAS=6.3A,VDD=500V,RG=25Ω,Starting TJ=25℃ 3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 4. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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