www.winsemi.com

Tel : +86-755-8250 6288

Fax : +86-755-8250 6299

4/9

WINSEMI MICROELECTRONICS

WINSEMI MICROELECTRONICS

WINSEMI MICROELECTRONICS

WINSEMI MICROELECTRONICS

WINSEMI MICROELECTRONICS

SENSE input voltage

-0.3~7

V

DRAIN pin voltage

-0.3~650

V

Operation Junction Temperature

-20~150

℃

Storage Temperature

-40~150

℃

Vcc Clamp Voltage

35.5

V

Vcc Clamp Continuous Current

10

mA

Note: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only, functional operation of the device at these or any other conditions beyond those indicated in the

Recommended Operating Conditions section are not implied. Exposure to absolute maximum-rated conditions for extended

periods may affect device reliability.

ESD Information

Symbol

Parameter

Value

Unit

Human body model on all pins

3

KV

Machine model on all pins

300

V

Electrical Characteristics

Supply Voltage (VDD)

symbol

parameter

Test condition

Min

Typ

Max

Unit

VDD_OP

Operation voltage

34

V

UVLO_ON

Turn on threshold Voltage

7.2

8.1

9.0

V

UVLO_OFF

Turn-off threshold Voltage

14.0

15.0

16.0

V

I_VDD_ST

Start up current

VDD=13V

4

10

uA

I_VDD_OP

Operation Current

GATE with 1nF to GND

1.7

2.5

mA

VDD_OVP

34.5

V

VDD_Clamp

VDD Zener Clamp Voltage

IVDD=10mA

35.5

V

Feedback Input Section

VDD=16V,FB open,

4.3

5.0

5.6

V

FB Pin Short Current

FB Shorted to GND

0.22

0.315

0.41

mA

Power limiting FB Threshold

VDD=16V

3.2

3.65

4.0

V

Power limiting Debounce

VDD=16V，FB open

48

60

72

ms

Input Impedance

VDD=16V，FB=2V/3V，CS open

13

16.5

20

kΩ

Current Sense Section

TLEB

Leading edge Blanking Time

330

ns

OCP control delay

GATE with 1nF to GND

70

ns

OCP threshold

FB＝3.4V

0.690

0.740

0.790

V

Max_OC

Max_OCP for line comp

FB＝3.4V

0.9

0.95

1

V

Vth_SBD

CS threshold for SBD short

VDD=16V

2.0

V

Td_SBD

Delay of SBD short protect

8 PWM cycle

8

CLK

Oscillator Section