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L532 Datasheet(PDF) 1 Page - IXYS Corporation

Part # L532
Description  IGBT phaseleg in ISOPLUS i4-PAC
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

L532 Datasheet(HTML) 1 Page - IXYS Corporation

  L532 Datasheet HTML 1Page - IXYS Corporation L532 Datasheet HTML 2Page - IXYS Corporation  
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© 2004 IXYS All rights reserved
FII 30-06D
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• NPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFREDTM diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
I
C25
= 30 A
V
CES
= 600 V
V
CE(sat) typ. = 1.9 V
IGBT phaseleg
in ISOPLUS i4-PACTM
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1
5
Preliminary data
3
5
4
1
2
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
± 20
V
I
C25
T
C =
25°C
30
A
I
C90
T
C =
90°C
18
A
I
CM
V
GE = ±15 V; RG = 47 Ω; TVJ = 125°C
40
A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH
V
CES
t
SC
V
CE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
10
µs
(SCSOA)
non-repetitive
P
tot
T
C = 25°C
100
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 20 A; VGE = 15 V; TVJ =
25°C
1.9
2.4
V
T
VJ = 125°C
2.2
V
V
GE(th)
I
C = 0.5 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
0.6
mA
T
VJ = 125°C
0.6
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
200
nA
t
d(on)
50
ns
t
r
55
ns
t
d(off)
300
ns
t
f
30
ns
E
on
0.92
mJ
E
off
0.68
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
1.1
nF
Q
Gon
V
CE = 300 V; VGE = 15 V; IC = 20 A
65
nC
R
thJC
1.25 K/W
R
thJH
with heat transfer paste
2.5
K/W
Inductive load, T
VJ = 125°C
V
CE = 300 V; IC = 20 A
V
GE = ±15 V; RG = 47


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