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L532 Datasheet(PDF) 1 Page - IXYS Corporation |
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L532 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page 1 - 2 © 2004 IXYS All rights reserved FII 30-06D IXYS reserves the right to change limits, test conditions and dimensions. Features • NPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching • HiPerFREDTM diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered E 72873 Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier I C25 = 30 A V CES = 600 V V CE(sat) typ. = 1.9 V IGBT phaseleg in ISOPLUS i4-PACTM IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 1 5 Preliminary data 3 5 4 1 2 IGBTs Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 600 V V GES ± 20 V I C25 T C = 25°C 30 A I C90 T C = 90°C 18 A I CM V GE = ±15 V; RG = 47 Ω; TVJ = 125°C 40 A V CEK RBSOA, Clamped inductive load; L = 100 µH V CES t SC V CE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive P tot T C = 25°C 100 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 20 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V T VJ = 125°C 2.2 V V GE(th) I C = 0.5 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES; VGE = 0 V; TVJ = 25°C 0.6 mA T VJ = 125°C 0.6 mA I GES V CE = 0 V; VGE = ± 20 V 200 nA t d(on) 50 ns t r 55 ns t d(off) 300 ns t f 30 ns E on 0.92 mJ E off 0.68 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 1.1 nF Q Gon V CE = 300 V; VGE = 15 V; IC = 20 A 65 nC R thJC 1.25 K/W R thJH with heat transfer paste 2.5 K/W Inductive load, T VJ = 125°C V CE = 300 V; IC = 20 A V GE = ±15 V; RG = 47 Ω |
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