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SBAS40-06LT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # SBAS40-06LT1G
Description  Common Anode Schottky Barrier Diodes
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SBAS40-06LT1G Datasheet(HTML) 2 Page - ON Semiconductor

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BAS40−06LT1G, SBAS40−06LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
40
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
5.0
pF
Reverse Leakage
(VR = 25 V)
IR
1.0
mAdc
Forward Voltage
(IF = 1.0 mAdc)
VF
380
mVdc
Forward Voltage
(IF = 10 mAdc)
VF
500
mVdc
Forward Voltage
(IF = 40 mAdc)
VF
1.0
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100
0
0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2
0.3
0.4
0.5
10
1.0
0.1
85
°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0
10
15
20
25
3.5
0
VR, REVERSE VOLTAGE (VOLTS)
3.0
1.0
0.5
0
5.0
10
15
40
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40
°C
25
°C
TA = 150°C
25
°C
0.8
-55
°C
125
°C
150
°C
100
25
20
1.5
2.0
2.5
0.6
0.7
125
°C
85
°C
30
35


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