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SBAS40-06LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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SBAS40-06LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page BAS40−06LT1G, SBAS40−06LT1G www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 40 − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 5.0 pF Reverse Leakage (VR = 25 V) IR − 1.0 mAdc Forward Voltage (IF = 1.0 mAdc) VF − 380 mVdc Forward Voltage (IF = 10 mAdc) VF − 500 mVdc Forward Voltage (IF = 40 mAdc) VF − 1.0 Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 100 0 0.1 VF, FORWARD VOLTAGE (VOLTS) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 °C 10 0 VR, REVERSE VOLTAGE (VOLTS) 1.0 0.1 0.01 0.001 5.0 10 15 20 25 3.5 0 VR, REVERSE VOLTAGE (VOLTS) 3.0 1.0 0.5 0 5.0 10 15 40 Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage Figure 3. Typical Capacitance -40 °C 25 °C TA = 150°C 25 °C 0.8 -55 °C 125 °C 150 °C 100 25 20 1.5 2.0 2.5 0.6 0.7 125 °C 85 °C 30 35 |
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