© Semiconductor Components Industries, LLC, 1997

October, 2016 − Rev. 12

1

Publication Order Number:

BAS40−04LT1/D

BAS40-04LT1G,

SBAS40-04LT1G

Dual Series

Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

40

V

Forward Power Dissipation

Derate above 25°C

225

1.8

mW

mW/°C

Operating Junction and Storage

Temperature Range

−55 to +150

°C

Forward Continuous Current

120

mA

Single Forward Current

t v 1 s

t v 10 ms

200

600

mA

Thermal Resistance (Note 1)

Junction−to−Ambient (Note 2)

508

311

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

1. FR−4 @ minimum pad.

2. FR−4 @ 1.0 x 1.0 in pad.

www.onsemi.com

Device

Package

ORDERING INFORMATION

SOT−23 (TO−236)

CASE 318

STYLE 11

40 VOLTS

SCHOTTKY BARRIER DIODES

MARKING DIAGRAM

CB

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

ANODE

1

CATHODE

2

3

CATHODE/ANODE

BAS40−04LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

CB MG

G

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

SBAS40−04LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel