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LM9061 Datasheet(PDF) 8 Page - National Semiconductor (TI) |
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LM9061 Datasheet(HTML) 8 Page - National Semiconductor (TI) |
8 / 14 page Application Hints (Continued) To protect the MOSFET from exceeding its maximum junc- tion temperature rating the power dissipation needs to be limited The maximum power dissipation allowed (derated for temperature) and the maximum drain to source ON re- sistance RDS(ON) with both at the maximum operating am- bient temperature needs to be determined When switched ON the power dissipation in the MOSFET will be PDISS e VDS2 RDS(ON) The VDS voltage to limit the maximum power dissipation is therefore VDS (MAX) e 0PD (MAX) c RDS(ON) (MAX) With this restriction the actual load current and power dissi- pation obtained will be a direct function of the actual RDS(ON) of the MOSFET at any particular ambient tempera- ture but the junction temperature of the power device will never exceed its rated maximum To limit the maximum load current requires an estimate of the minimum RDS(ON) of the MOSFET (the minimum RDS(ON) of discrete MOSFETs is rarely specified) over the required operating temperature range The maximum current to the load will be ILOAD (MAX) e VDS RDS(ON) (MIN) The maximum junction temperature of the MOSFET andor the maximum current to the load can be limited by monitor- ing and setting a maximum operational value for the drain to source voltage drop VDS In addition in the event that the load is inadvertently shorted to ground the power device will automatically be turned-OFF In all cases should the MOSFET be switched OFF by the built in protection comparator the output sink current is switched to only 10 mA to gradually turn OFF the power device Figure 3 illustrates how the threshold voltage for the internal protection comparator is established Two resistors connect the drain and source of the MOSFET to the LM9061 The Sense input pin 1 monitors the source voltage while the Threshold input pin 2 is connected to the drain which is also connected to the constant load power supply Both of these inputs are the two inputs to the protec- tion comparator Should the voltage at the sense input ever drop below the voltage at the threshold input the protection comparator output goes high and initiates an automatic latch-OFF function to protect the power device Therefore the switching threshold voltage of the comparator directly controls the maximum VDS allowed across the MOSFET while conducting load current The threshold voltage is set by the voltage drop across re- sistor RTHRESHOLD A reference current is fixed by a resis- tor to ground at IREF pin 6 To precisely regulate the refer- ence current over temperature a stable band gap reference voltage is provided to bias a constant current sink The ref- erence current is set by IREF e VREF RREF The reference current sink output is internally connected to the threshold pin IREF then flows from the load supply through RTHRESHOLD The fixed voltage drop across RTHRESHOLD is approximately equal to the maximum value of VDS across the MOSFET before the protection compara- tor trips It is important to note that the programmed reference cur- rent serves a multiple purpose as it is used internally for biasing and also has a direct effect on the internal charge pump switching frequency The design of the LM9061 is optimized for a reference current of approximately 80 mA set with a 154 kX g1% resistor for RREF To obtain the guaranteed performance characteristics it is recommended that a 154 kX resistor be used for RREF The protection comparator is configured such that during normal operation when the output of the comparator is low the differential input stage of the comparator is switched in TLH12317 – 11 FIGURE 3 Protection Comparator Biasing 8 |
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