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ZSSC3135BE2R Datasheet(PDF) 9 Page - Integrated Device Technology

Part # ZSSC3135BE2R
Description  Sensor Signal Conditioner for Piezoresistive Bridge Sensors
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

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ZSSC3135 Datasheet
© 2016 Integrated Device Technology, Inc.
9
January 27, 2016
1.4.
Interface Characteristics and EEPROM
Table 1.4
Interface Characteristics and EEPROM
No.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
1.4.1.
I²C
TM Interface 1)
1.4.1.1
I²C™ voltage level HIGH
VI²C,HIGH
0.8
VDDA
1.4.1.2
I²C™ voltage level LOW
2)
VI²C,LOW
0.2
VDDA
1.4.1.3
Slave output level LOW
2)
VI²C,LOW_OUT
Open drain, IOL<2mA
0.15
VDDA
1.4.1.4
SDA load capacitance
2)
CSDA
400
pF
1.4.1.5
SCL clock frequency
2)
fI²C
fOSC
≥2MHz
400
kHz
1.4.1.6
Internal pull-up resistor
2)
RI²C,PULLUPI
25
100
k
1.4.2.
ZACwire™ One-Wire Interface (OWI)
1)
1.4.2.1
OWI voltage level HIGH
2)
VOWI,HIGH
0.75
VDDA
1.4.2.2
OWI voltage level LOW
2)
VOWI,LOW
0.2
VDDA
1.4.2.3
Slave output level LOW
2)
VOWI,LOW_OUT Open drain, IOL<2mA
0.15
VDDA
1.4.2.4
Start window
2)
tOWI,STARTWIN
At fOSC=3MHz
96
175
455
ms
1.4.3.
EEPROM
1.4.3.1
Ambient temperature for
EEPROM programming
2)
TAMB_EEP
-40
150
°C
1.4.3.2
Write cycles
2)
nEEP_WRI
Write <= 85°C
100 000
Write up to 150°C
100
1.4.3.3
Read cycles
2) 3)
nEEP_READ
≤175°C
8 * 10
8
1.4.3.4
Data retention
2) 4)
tEEP_RETENTION 1300h at 175°C
( =
3000h at 150°C
+ 27000h at 125°C
+ 100000h at
55°C)
15
a
1.4.3.5
Programming time
2)
tEEP_WRI
Per written word
12
ms
1)
Refer to the ZSSC313x Functional Description for timing details.
2)
No measurement in mass production, parameter is guaranteed by design and/or quality observation.
3)
Valid for the dice. Note that the package and the temperature version cause additional restrictions.
4)
Over lifetime and valid for the dice. Use the calculation sheet IDT Temperature Profile Calculation Sheet for temperature stress calculation. Note that
the package and the temperature version cause additional restrictions.


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