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ZXMN6A09G Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN6A09G Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXMN6A09G SEMICO NDUC TORS PROVISIONAL ISSUE D - SEPTEMBER 2003 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 62.5 °C/W Junction to Ambient (b)(d) RθJA 32.2 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. THERMAL RESISTANCE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 60 V Gate Source Voltage VGS 20 V Continuous Drain Current (VGS=10V; TA=25°C) (b) (VGS=10V; TA=70°C) (b) (VGS=10V; TA=25°C) (a) ID 6.9 5.6 5.0 A Pulsed Drain Current (c) IDM 30.6 A Continuous Source Current (Body Diode) (b) IS 3.5 A Pulsed Source Current (Body Diode) (c) ISM 30.6 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 2.0 16 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 3.9 31 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C |
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