© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 7

1

Publication Order Number:

MBD701/D

MBD701,

MMBD701L,

SMMBD701L

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

Site and Control Change Requirements; AEC Qualified and PPAP

Capable

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

70

V

Forward Power Dissipation

MBD701

MMBD701L, SMMBD701L

Derate above 25

°C

MBD701

MMBD701L, SMMBD701L

280

200

2.8

2.0

mW

mW/

°C

Operating Junction Temperature

Range

−55 to +125

°C

Storage Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

SOT−23 (TO−236)

CASE 318

STYLE 8

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

1

5H M

G

G

A

= Assembly Location

Y

= Year

W

= Work Week

5H

= Device Code (SOT−23)

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

TO−92 2−Lead

CASE 182

STYLE 1

MBD

701

AYW

G

G

SOT−23

TO−92

SOT−23

TO−92

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com