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NSR30CM3 Datasheet(PDF) 2 Page - ON Semiconductor |
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NSR30CM3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NSR30CM3 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 mA Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 V Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1) trr − − 5.0 ns Forward Current (DC) IF − − 200 mA Repetitive Peak Forward Current IFRM − − 300 mA Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM − − 600 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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