© Semiconductor Components Industries, LLC, 2016

October, 2016 − Rev. P2

1

Publication Order Number:

NSR05T30P2/D

NSR05T30P2

Product Preview

500 mA, 30 V Schottky

Barrier Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in spacing saving

micro−packaging ideal for space constraint applications.

Features

− Charged Device Model: Class IV

Compliant

Typical Applications

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Forward Current (DC)

500

mA

Forward Surge Current

(60 Hz @ 1 cycle)

2.5

A

Repetitive Peak Forward Current

(Pulse Wave = 1 sec, Duty Cycle = 66%)

1

A

ESD Rating:

Human Body Model

Charged Device Model

ESD

> 8

> 1

kV

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

1

CATHODE

2

ANODE

www.onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

NSR05T30P2T5G SOD−923

(Pb−Free)

2 mm Pitch

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOD−923

CASE 514AB

MARKING

DIAGRAM

1

2

YNM

YN

= Specific Device Code

M

= Date Code