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TJA1020 Datasheet(PDF) 8 Page - NXP Semiconductors |
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TJA1020 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 22 page 2004 Jan 13 8 Philips Semiconductors Product specification LIN transceiver TJA1020 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to pin GND. Notes 1. Equivalent to discharging a 100 pF capacitor through a 1.5 k Ω resistor. 2. Equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH coil. In the event of a discharge from pin INH to pin BAT: −150V<Vesd(MM) < +150 V. THERMAL CHARACTERISTICS According to IEC60747-1. QUALITY SPECIFICATION Quality specification in accordance with “AEC - Q100”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VBAT supply voltage on pin BAT −0.3 +40 V VTXD, VRXD, VNSLP DC voltage on pins TXD, RXD and NSLP −0.3 +7 V VLIN DC voltage on pin LIN −27 +40 V VNWAKE DC voltage on pin NWAKE −1 +40 V INWAKE current on pin NWAKE (only relevant if VNWAKE <VGND − 0.3 V; current will flow into pin GND) −15 − mA VINH DC voltage on pin INH −0.3 VBAT + 0.3 V IINH output current at pin INH −50 +15 mA Vtrt(LIN) transient voltage on pin LIN (ISO7637) −150 +100 V Tvj virtual junction temperature −40 +150 °C Tstg storage temperature −55 +150 °C Vesd(HBM) electrostatic discharge voltage; human body model note 1 on pins NWAKE, LIN and BAT −4+4 kV on pins RXD, NSLP, TXD and INH −2+2 kV Vesd(MM) electrostatic discharge voltage; machine model; all pins note 2 −200 +200 V SYMBOL PARAMETER CONDITION VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in SO8 package in free air 145 K/W Rth(j-s) thermal resistance from junction to substrate bare die in free air 50 K/W |
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