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TJA1020 Datasheet(PDF) 8 Page - NXP Semiconductors

Part # TJA1020
Description  LIN transceiver
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TJA1020 Datasheet(HTML) 8 Page - NXP Semiconductors

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2004 Jan 13
8
Philips Semiconductors
Product specification
LIN transceiver
TJA1020
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to pin GND.
Notes
1. Equivalent to discharging a 100 pF capacitor through a 1.5 k
Ω resistor.
2. Equivalent to discharging a 200 pF capacitor through a 10
Ω resistor and a 0.75 µH coil. In the event of a discharge
from pin INH to pin BAT:
−150V<Vesd(MM) < +150 V.
THERMAL CHARACTERISTICS
According to IEC60747-1.
QUALITY SPECIFICATION
Quality specification in accordance with
“AEC - Q100”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VBAT
supply voltage on pin BAT
−0.3
+40
V
VTXD, VRXD, VNSLP DC voltage on pins TXD, RXD and NSLP
−0.3
+7
V
VLIN
DC voltage on pin LIN
−27
+40
V
VNWAKE
DC voltage on pin NWAKE
−1
+40
V
INWAKE
current on pin NWAKE (only relevant if
VNWAKE <VGND − 0.3 V; current will flow into
pin GND)
−15
mA
VINH
DC voltage on pin INH
−0.3
VBAT + 0.3
V
IINH
output current at pin INH
−50
+15
mA
Vtrt(LIN)
transient voltage on pin LIN (ISO7637)
−150
+100
V
Tvj
virtual junction temperature
−40
+150
°C
Tstg
storage temperature
−55
+150
°C
Vesd(HBM)
electrostatic discharge voltage; human body
model
note 1
on pins NWAKE, LIN and BAT
−4+4
kV
on pins RXD, NSLP, TXD and INH
−2+2
kV
Vesd(MM)
electrostatic discharge voltage; machine
model; all pins
note 2
−200
+200
V
SYMBOL
PARAMETER
CONDITION
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in
SO8 package
in free air
145
K/W
Rth(j-s)
thermal resistance from junction to substrate
bare die
in free air
50
K/W


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