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ADA4177-2ARZ Datasheet(PDF) 7 Page - Analog Devices |
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ADA4177-2ARZ Datasheet(HTML) 7 Page - Analog Devices |
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7 / 31 page  Data Sheet ADA4177-1/ADA4177-2/ADA4177-4 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage 36 V Input Voltage V SY ± 32 V Differential Input Voltage ±V SY Output Short-Circuit Duration to GND See the Maximum Power Dissipation section Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +125°C Junction Temperature Range −65°C to +150°C Lead Temperature, Soldering (10 sec)1 300°C ESD Human Body Model (HBM)2 4 kV Field Induced Charged Device Model (FICDM)3 1250 V Machine Model (MM) 200 V 1 IPC/JEDEC J-STS-020D applicable standard. 2 ESDA/JEDEC JS-001-2011 applicable standard. 3 JESD22-C101 (ESD FICDM standard of JEDEC) applicable standard. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. MAXIMUM POWER DISSIPATION The ADA4177-1, ADA4177-2, and ADA4177-4 can drive a short-circuit output current of up to 65 mA. However, the usable output load current drive is limited by the maximum power dissipation allowed by the device package. The absolute maximum junction temperature is 150°C (see Table 4). The junction temperature can be estimated as follows: TJ = PD × θJA + TA where: TJ is the die junction temperature. PD is the power dissipated in the package. θJA is the thermal resistance of the package. TA is the ambient temperature. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated by the output stage transistor. It is calculated as follows: PD = (VSY × ISY) + (VSY − VOUT) × ILOAD where: VSY is the power supply rail. ISY is the quiescent current. VOUT is the output of the amplifier. ILOAD is the output load. Do not exceed the 150°C maximum junction temperature for the device. Exceeding the junction temperature limit can cause degradation in the parametric performance or even destroy the device. Refer to Technical Article MS-2251, Data Sheet Intricacies— Absolute Maximum Ratings and Thermal Resistances, for more information. THERMAL RESISTANCE Thermal resistance between junction and ambient (θJA) is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 5. Thermal Resistance Package Type θ JA θ JC Unit 8-Lead MSOP 190 44 °C/W 8-Lead SOIC 158 43 °C/W 14-Lead TSSOP 240 43 °C/W 14-Lead SOIC 115 36 °C/W ESD CAUTION Rev. C | Page 7 of 31 |
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