ZLED7001 Datasheet

© 2016 Integrated Device Technology, Inc.

11

April 20, 2016

current as

Ω

=

=

=

596

.

0

5

.

402

240

_

mA

mV

I

V

R

PEAK

O

CSTH

CS

This value can be built by a 0.68

Ω in parallel with a 4.7Ω type.

MOSFET (Q1) and Diode (D1)

The MOSFET and diode must be dimensioned with a minimum 50% safety rating of their relevant voltage and

current parameters. Thus a FET with minimum 500V drain-source breakdown voltage and 0.6A drain current as

well as a fast recovery diode with at least 500V reverse voltage and a 0.6A forward current may be selected.

3

ESD/Latch-Up-Protection

All pins have an ESD protection of >± 2000V according human body model (HBM). The ESD test follows the

H

uman Body Model with 1.5 kΩ/100 pF based on MIL 883-G, Method 3015.7

Latch-up protection of >± 100mA has been proven based on JEDEC No. 78A Feb. 2006, temperature class 1.