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RA30H4452M-01 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA30H4452M-01 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 9 page  MITSUBISHI RF MOSFET MODULE RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD ≅0 @ V DD=12.5V, VGG=0V) • Pout>30W, η T>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 440-520MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • 66 x 21 x 9.8 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA30H4452M-E01 RA30H4452M-01 (Japan - packed without desiccator) Antistatic tray, 10 modules/tray 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) BLOCK DIAGRAM 2 4 1 5 3 |
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