MBT3906DW1T2G datasheet(5/6 Pages) ONSEMI

Part #	MBT3906DW1T2G

Description	Dual General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MBT3906DW1, SMBT3906DW1

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5

TYPICAL STATIC CHARACTERISTICS

Figure 13. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

0.5

2.0

3.0

10

50

70

0.2

0.3

0.1

100

1.0

0.7

200

30

20

5.0

7.0

VCE = 1.0 V

TJ = +125°C

+25

°C

-55

°C

Figure 14. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

10

0.2

0.3

0

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

Figure 15. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 16. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

0

100

-0.5

0

0.5

1.0

0

60

80

120

140

160

180

20

40

100

200

-1.0

-1.5

-2.0

200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

+25

°C TO +125°C

-55

°C TO +25°C

+25

°C TO +125°C

-55

°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

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