MJD210G datasheet(5/7 Pages) ONSEMI

Part #	MJD210G

Description	Complementary Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD200 (NPN), MJD210 (PNP)

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5

t, TIME (ms)

0.01

0.02

0.05

1

2

5

10

20

50

100

200

0.1

0.5

0.2

1

0.2

0.1

0.05

RqJC(t) = r(t) qJC

RqJC = 10°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

Figure 8. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

10

VCE, COLLECTOR−EMITTER VOLTAGE (V)

0.01

30

2

5

0.1

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 9. Active Region Safe Operating Area

500

ms

dc

1

3

1ms

20

10

7

5

3

2

1

0.3

100

ms

TJ = 150°C

5ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 150

°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150°C. TJ(pk) may be calculated from the data in Figure 8.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

VR, REVERSE VOLTAGE (V)

20

40

70

100

30

Figure 10. Capacitance

50

20

10

6

4

2

1

0.4

0.6

TJ = 25°C

MJD200 (NPN)

MJD210 (PNP)

Cob

Cib

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