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NSVBT2222ADW1 Datasheet(PDF) 2 Page - ON Semiconductor |
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NSVBT2222ADW1 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  MBT2222ADW1, NSVBT2222ADW1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 − Vdc Emitter−Base Breakdown Voltage, (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX − 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) ICBO − − 0.01 10 mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBL − 20 nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) hFE 35 50 75 35 100 50 40 − − − − 300 − − − Collector−Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.3 1.0 Vdc Base−Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.6 − 1.2 2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 25 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 0.25 8.0 1.25 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre − − 8.0 4.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 50 75 300 375 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 5.0 25 35 200 mmhos Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc − 150 ps Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 ns Rise Time tr − 25 Storage Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 ns Fall Time tf − 60 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. |
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